Tohoku Gakuin University

Language
日本語 English

Search
  1. HOME
  2. Undergraduate/ Graduate Schools
  3. Faculty of Engineering
  4. Department of Electrical and Electronic Engineering
  5. Faculty Introduction
  6. ENDO, Haruyuki Associate Professor

Faculty of Engineering Department of Electrical and Electronic Engineering

Faculty Introduction

Teacher Profiles

ENDO, Haruyuki Associate Professor (Electrical Power and Control Systems)

ENDO, Haruyuki Associate Professor

degree Ph.D. (Engineering)
Specialty Semiconductor engineering, power devices, sensors
Affiliated academic societies Japan Society of Applied Physics, Institute of Electrical Engineers of Japan, Japan Consulting Engineers Association
others
Qualifications:
Professional Engineer (Electrical and Electronic Engineering), Electronic Applications, Noise Prevention Engineer, Radiation Technology Manager (Level 2), US Professional Engineer (FE)
Hobbies, etc.:
Guitar, fishing, etc.
Subjects Taught Electrical and Electronic Engineering Experiment III, Electromagnetic Energy Conversion Engineering, Engineering Ethics
Website Power Device and Sensor Engineering Laboratory
Reportmap
Research topic
  • Development of electronic devices using ZnO-based oxide semiconductors
Career
1984年 Graduated from Fukushima Prefectural Koriyama Kita Technical High School, Department of Electronic Engineering.
1988年 Graduated from Tohoku Gakuin University Faculty of Engineering Department of Electrical Engineering.
1990年 Completed the Master's Program in Electrical Engineering, Graduate Graduate School of Engineering Tohoku Gakuin Graduate Schools.
1990年 Joined Ishizuka Electronics Co., Ltd.
2002年 Joined the Electronic and Mechanical Engineering Department of the Iwate Prefectural Industrial Technology Center.
2008年 Completed doctoral program in Nanomechanics, Graduate Graduate School of Engineering Tohoku Graduate Schools.
2022年 Director of Functional Materials Technology Department, Iwate Prefectural Industrial Technology Center (a local independent administrative agency)
2025年 Associate Professor, Department Department of Electrical and Electronic Engineering Faculty of Engineering Tohoku Gakuin University
performance
book
  • Cutting-edge technology and future of zinc oxide (co-authored), CMC Publishing, 2011, Haruyuki Endo
Original paper
  • Fabrication and characterization of a Pt/MgZnO/ZnO Schottky photodiode utilizing a field plate structure, Japanese Journal of Applied Physics, 57, 04FG08, (2018), H. Endo, K. Takahashi, and Y. Kashiwaba
  • Applicability of nitrogen-doped ZnO single crystals for photoconductive type UV sensors, Physica Status Solidi c, 11, 7-8, pp.1304-1307, (2014), S. Takahashi, T. Abe, A. Nakagawa, S. Kamata, T. Chiba, M. Nakagawa, Y. Kashiwaba, S. Chiba, H. Endo, K. Meguro, M. Daibo, I. Niikura, Y. Kashiwaba, S. Oshima, H. Osada
  • Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions, Journal of Applied Physics, 113, 17C106, (2013), M. Belmoubarik, T. Nozaki, H. Endo, M. Sahashi
  • 15 Mcps photon-counting X-ray computed tomography system using a ZnO-MPPC detector and its application to gadolinium imaging, Applied Radiation and Isotopes, 70, 1, pp.336-340, (2012), E. Sato, S. Sugimura, H. Endo, Y. Oda, A. Abudurexiti, O. Hagiwara, A. Osawa, H. Matsukiyo, T. Enomoto, M. Watanabe, S. Kusachi, S. Sato, A. Ogawa, J. Onagawa.
  • Development of radiation sensor based on Pt/ZnO Schottky diode, 2011 IEEE Symposium on Nuclear Science, 12557401, (2011), S. Narita, Y. Nishibori, H. Naito, H. Ito, H. Endo, T. Chiba
  • Fabrication and characterization of a ZnO X-ray sensor using a high-resistivity ZnO single crystal grown by the hydrothermal method, Nuclear Instruments and Methods in Physics Research Section A, 665, 11, pp.15-18, (2011), H. Endo, T. Chiba, K. Meguro, K. Takahashi, M. Fujisawa, S. Sugimura, S. Narita, Y. Kashiwaba, E. Sato
  • 6 Mcps photon-counting X-ray computed tomography system using a 25 mm/s-scan linear LSO–MPPC detector and its application to gadolinium imaging, Radiation Physics and Chemistry, 80, 12, pp.1327-1332, (2011), E. Sato, Y. Oda, A. Abudurexiti, O. Hagiwara, H. Matsukiyo, A. Osawa, T. Enomoto, M. Watanabe, S. Kusachi, S. Sugimura, H. Endo, S. Sato, A. Ogawa, J. Onagawa.
  • Optical properties of three sectors in a zinc-oxide single crystal grown under hydrothermal process, Nuclear Instruments and Methods in Physics Research Section A, 654, 1, pp.314-317, (2011), S. Sugimura, H. Endo, Y. Kashiwaba, E. Sato
  • Mcps-range photon-counting X-ray computed tomography system utilizing an oscillating linear-YAP(Ce) photon detector, Nuclear Instruments and Methods in Physics Research Section A, 643, 1, pp.69-74, (2011), Y. Oda, E. Sato, A. Abudurexiti, O. Hagiwara, A. Osawa, H. Matsukiyo, T. Enomoto, M. Watanabe, S. Kusachi, S. Sugimura, H. Endo, S. Sato, A. Ogawa, J. Onagawa.
  • ZnO radiation sensors using hydrothermally grown ZnO single crystal, The 29th International Congress on High-Speed Imaging and Photonics, (2010), H. Endo, T. Chiba, K. Meguro, K. Takahashi, M. Fujisawa, S. Sugimura, S. Narita, E. Sato, Y. Kashiwaba
  • Homoepitaxial growth of high-quality nonpolar ZnO films by MOCVD and evaluation of the homoepitaxial ZnO films by XRD measurement for asymmetric planes, Physica Status Solidi c, 206, 5, pp.944-947, (2009), Y. Kashiwaba, T. Abe, A. Nakagawa, H. Endo, I. Niikura, Y. Kashiwaba
  • Fabrication and Characteristics of a Pt/MgxZn1-xO Schottky Photodiode on a ZnO Single Crystal, Physica Status Solidi c, 5, 9, pp.3119-3121, (2008), H. Endo, M. Sugibuchi, K. Takahashi, S. Goto, K. Hane and Y. Kashiwaba
  • High-Sensitivity Mid-Ultraviolet Pt/Mg0.59Zn0.41O Schottky Photodiode on a ZnO Single Crystal Substrate, Applied Physics Express, 1, 051201, (2008), H. Endo, M. Kikuchi, M. Ashioi, Y. Kashiwaba, K. Hane and Y. Kashiwaba
  • Schottky Ultraviolet Photodiode using A ZnO Hydrothermally Grown Single Crystal, Applied Physics Letters, 90, 121906, (2007), H. Endo, M. Sugibuchi, K. Takahashi, S. Goto, S. Sugimura, K. Hane and Y. Kashiwaba
  • Fabrication and Characterization of Schottky Barrier Diode Type Ultraviolet Sensor using ZnO Single Crystal, IEEJ Transactions on Sensors and Micromachines, 127, 3, pp.127-131, (2007), H. Endo, M. Sugibuchi, K. Takahashi, S. Goto, T. Hasegawa, E. Ohshima, K. Meguro, K. Hane and Y. Kashiwaba
patent
  • Piezoelectric element (Japanese Patent Application No. 2020-196563)
  • Ultraviolet sensor element and method for manufacturing the same (Patent No. 5540175)
  • Pressure sensor element (Patent No. 5994135)
  • Glow plug (Japanese Patent Application No. 2011-18714)
  • Semiconductor radiation detector (Japanese Patent Application No. 2008-89432)
  • Device equipped with multiple ultraviolet sensors (Patent No. 4806812)
  • Pressure sensor element and pressure sensor (Patent No. 5256423)
  • Photovoltaic ultraviolet sensor (Patent No. 5109049)
  • Ultraviolet sensor element and method for manufacturing the same (Patent No. 5190570)
  • Method for manufacturing a superconducting magnesium boride thin film (Patent No. 5055554)
  • Thermopile Infrared Sensor and Process for Producing the Same (US6348650)
  • Infrared sensor and infrared detector (US5962854)
  • Thin-film Temperature Sensor (US5798684)
  • Radiation temperature detection device for induction heating cooker and calculation device for said device (Publication No. 2004-063451)
  • Thermopile-type infrared sensor and method for manufacturing the same (Patent No. 4511676)
  • Frost detection device (Japanese Patent Publication No. 11-094437)
  • Infrared sensor (Japanese Patent Publication No. 10-318829)
  • Infrared sensor and infrared detector (Japanese Patent Publication No. 09-329499)
  • Infrared detector (Japanese Patent Publication No. 08-278192)
  • Thin-film temperature sensor and method for manufacturing the same (Patent No. 3494747)
  • Thin-film thermistor (Patent No. 3312752)

Related Pages